This inventor holds 1 USPTO granted patent. Top assignee: Showa Denko K.k.. Active years: 2008.
Company Filing History:
Years Active: 2008
Title: Soichiro Masuyama: Innovator in Gallium Nitride-Based Technology
Introduction
Soichiro Masuyama is a notable inventor based in Ichihara, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting devices. His innovative work has led to the filing of a patent that addresses critical challenges in the efficiency of these devices.
Latest Patents
Masuyama holds a patent for a gallium nitride-based compound semiconductor light-emitting device and the electrode used in such devices. The primary objective of this invention is to provide a light-permeable electrode that enhances light permeability and reduces contact resistance. The electrode consists of a light-permeable first layer that contacts the surface of a p-contact layer in the semiconductor device, ensuring ohmic contact. This first layer is made from a metal or an alloy selected from a group that includes Au, Pt, Pd, Ni, Co, and Rh. The second layer, which also contacts the p-contact layer, is composed of an oxide of at least one metal from a different group, including Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg, and In.
Career Highlights
Masuyama is associated with Showa Denko K.K., a company known for its advancements in chemical and semiconductor technologies. His work at the company has been instrumental in pushing the boundaries of what is possible in light-emitting devices.
Collaborations
Throughout his career, Masuyama has collaborated with notable colleagues, including Noritaka Muraki and Hideki Tomozawa. These collaborations have contributed to the advancement of technology in the semiconductor field.
Conclusion
Soichiro Masuyama's contributions to gallium nitride-based technology exemplify the innovative spirit of modern inventors. His patent reflects a significant step forward in enhancing the performance of light-emitting devices.