Naka, Japan

Soichi Isono

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi Global Storage Technologies Japan, Ltd.. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Soichi Isono. Retrieved from https://idiyas.com/inventor/soichi-isono-9t8ny3h2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2005

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Soichi Isono - Innovator in Disk Apparatus Technology

Introduction

Soichi Isono is a notable inventor based in Naka, Japan. He has made significant contributions to the field of disk apparatus technology. His innovative work focuses on efficient defect management in storage devices.

Latest Patents

Soichi Isono holds a patent for a disk apparatus that enhances the efficiency of reading defect management information. The patent describes a method for storing pieces of defective track information associated with physical track numbers. This system allows for the efficient detection and processing of defective tracks, ensuring better performance of storage media.

Career Highlights

Isono is affiliated with Hitachi Global Storage Technologies Japan, Ltd., where he has applied his expertise in disk technology. His work has been instrumental in advancing the reliability and efficiency of storage devices.

Collaborations

Throughout his career, Soichi Isono has collaborated with talented individuals such as Hitoshi Ogawa and Takushi Nishiya. These collaborations have contributed to the development of innovative solutions in the field of storage technology.

Conclusion

Soichi Isono's contributions to disk apparatus technology demonstrate his commitment to innovation and efficiency. His patent reflects a significant advancement in defect management, showcasing his expertise in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…