Paju-si, South Korea

Sohyung Lee

This inventor holds 1 USPTO granted patent. Top assignee: Lg Display., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sohyung Lee. Retrieved from https://idiyas.com/inventor/sohyung-lee-9zg6tgp2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Sohyung Lee: Display Technology Inventor

Introduction

Sohyung Lee is an inventor based in Paju-si, South Korea, and is associated with LG Display Co., Ltd. His work includes an invention concerning display panels and transistor characteristics.

Latest Patents

The provided information lists 1 patent for Lee: “Display Panel, Display Device, and Method of Manufacturing Display Panel with Hole in Insulation Film Above Channel for Top Electrode Placement.” The patent describes a display panel with an active layer containing a transistor channel and two adjacent regions, electrodes connected to those regions, and an insulating film with a hole overlapping at least part of the channel. A third electrode overlaps the hole. The disclosed arrangement is intended to help maintain transistor characteristics in display devices.

Career Highlights

Lee’s listed patent focuses on the structure and manufacture of display panels, particularly the placement of an electrode above a channel through an opening in an insulating film. This work reflects an engineering contribution to display-device design.

Collaborations

The provided information names JeeHo Park and Junghyun Lee as Lee’s coworkers. No further details about their specific roles or collaboration on this patent were provided.

Conclusion

Sohyung Lee is associated with LG Display Co., Ltd. and a patented display-panel design intended to support stable transistor characteristics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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