Migdal Haemek, Israel

Slava Superfine

This inventor holds 1 USPTO granted patent. Top assignee: Tower Semiconductor Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Slava Superfine. Retrieved from https://idiyas.com/inventor/slava-superfine

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Slava Superfine: Patent Innovation in Wafer Position Detection.

Introduction

Slava Superfine is an inventor associated with Migdal Haemek, Israel, and Tower Semiconductor Ltd. The supplied information identifies one patent associated with Superfine.

Latest Patents

The listed patent, “Detection of a Position of a Wafer Within a Transfer Robot Vacuum Chamber,” describes a system for determining a wafer’s location inside a transfer robot vacuum chamber. It uses an illumination unit outside the chamber to direct radiation through a transparent window toward reflecting elements beneath the wafer-holding element. A sensing unit detects the reflected radiation, and a processing circuit uses the resulting signals to determine the wafer’s location. The supplied data lists 1 patent and does not specify when it was granted or filed.

Career Highlights

The patent focuses on wafer-position detection in a vacuum environment, a task relevant to the precise handling of wafers in semiconductor manufacturing. The supplied information connects Superfine’s work with Tower Semiconductor Ltd.

Collaborations

The supplied data names Yaniv Malachy and Dany Trabelsi as coworkers. It does not specify their roles in the patent or describe particular collaborations.

Conclusion

Slava Superfine’s listed patent addresses wafer-location detection within a transfer robot vacuum chamber, reflecting an innovation relevant to semiconductor equipment and manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…