This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Sandisk Technologies Inc.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Sisi Yang and Memory-Programming Innovation.
Introduction
Sisi Yang is an inventor associated with Campbell, California, and Sandisk Technologies Inc. Her work includes a patent concerning programming techniques for quad-level memory cells.
Latest Patents
Yang is credited with 1 patent: “Full Sequence Program for Edge Word Line Quad-Level Memory Cells.” The patent describes a memory apparatus and method in which cells connected to different word lines are programmed using distinct techniques. This approach addresses the programming of cells on selected edge word lines separately from cells on other word lines, while the cells retain threshold voltages corresponding to their data states.
Career Highlights
Yang’s listed patent reflects work in memory-device programming and storage technology. The invention focuses on coordinating programming operations across word lines in memory cells.
Collaborations
The patent is associated with Sandisk Technologies Inc., indicating a connection between Yang’s invention and the company’s memory-technology work.
Conclusion
Sisi Yang’s patent documents an approach to programming quad-level memory cells with different techniques for selected and other word lines.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile