Company Filing History:
Years Active: 2014-2015
Title: Sisi Xie: Innovator in Semiconductor Technology
Introduction
Sisi Xie is a prominent inventor based in Sichuan, China. He has made significant contributions to the field of semiconductor technology, particularly in the area of MOS devices. With a total of 2 patents, his work has garnered attention for its innovative approaches and practical applications.
Latest Patents
One of Sisi Xie's latest patents is titled "Multi-landing contact etching - A method for contacting MOS devices." This patent outlines a method for forming first openings in a photosensitive material over a substrate with a top dielectric in a first die area. It also describes a second opening over a gate stack in a second die area, which includes the top dielectric, a hard mask, and a gate electrode. The process involves etching the top dielectric layer to create a semiconductor contact while also etching a portion of the hard mask layer thickness over a gate contact area exposed by the second opening. Following this, an inter-layer dielectric (ILD) is deposited, and a photosensitive material is patterned to generate additional openings. The ILD is then etched to reopen the semiconductor contact and provide a gate contact to the gate electrode.
Career Highlights
Sisi Xie is currently employed at Texas Instruments Corporation, where he continues to develop innovative solutions in semiconductor technology. His work has been instrumental in advancing the capabilities of MOS devices, making them more efficient and reliable.
Collaborations
Sisi has collaborated with notable coworkers, including Fei Xie and Wen Cheng Tien, who have contributed to his projects and research endeavors.
Conclusion
Sisi Xie's contributions to semiconductor technology through his patents and work at Texas Instruments Corporation highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of MOS devices and semiconductor applications.