This inventor holds 1 USPTO granted patent. Top assignee: Sandisk Technologies Inc.. Active years: 2021.
Company Filing History:
Years Active: 2021
Title: Innovations by Sini Balakrishnan in Memory Management
Introduction
Sini Balakrishnan is an accomplished inventor based in Karnataka, India. He has made significant contributions to the field of memory management through his innovative patent. His work focuses on enhancing the efficiency and reliability of memory systems.
Latest Patents
Sini Balakrishnan holds a patent titled "Systems and methods for capacity management of a memory system." This patent describes a memory management method that includes identifying memory segments of a memory device. The method also involves identifying, for each memory segment, a number of faulty columns and determining a total number of faulty columns for the memory device. In response to a determination that the total number of faulty columns exceeds a threshold, the method identifies a memory segment with the highest number of faulty columns and subsequently disables that segment. Additionally, the method includes identifying, for each memory segment, a number of faulty memory blocks and determining a total number of faulty memory blocks. If the total number of faulty memory blocks is greater than a threshold, the method identifies a memory segment with the highest number of faulty memory blocks and disables it.
Career Highlights
Sini Balakrishnan is currently employed at Sandisk Technologies Inc., where he continues to innovate in the field of memory management. His expertise and dedication have contributed to advancements in technology that benefit various applications.
Collaborations
Sini has collaborated with notable colleagues, including Dat Tran and Kirubakaran Periyannan. Their teamwork has fostered an environment of innovation and creativity within their projects.
Conclusion
Sini Balakrishnan's contributions to memory management through his patent demonstrate his commitment to advancing technology. His work not only addresses current challenges in memory systems but also paves the way for future innovations in the field.
