This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Infineon Technologies Ag. Active years: 2017.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2017
Title: Simon Faiss - Innovator in Semiconductor Processing
Introduction
Simon Faiss is a notable inventor based in Regenstauf, Germany. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for processing semiconductor workpieces.
Latest Patents
Simon Faiss holds 1 patent for his invention titled "Method for processing a semiconductor workpiece and semiconductor workpiece." This patent describes a method that includes depositing a first metallization layer over a semiconductor workpiece, patterning the first metallization layer, and depositing a second metallization layer over the patterned first metallization layer. The process involves an electroless deposition technique, which includes immersing the patterned first metallization layer in a metal electrolyte.
Career Highlights
Simon Faiss is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to explore and implement advanced technologies in semiconductor processing.
Collaborations
Throughout his career, Simon has collaborated with talented professionals, including Stephan Henneck and Evelyn Napetschnig. These collaborations have contributed to the advancement of semiconductor technologies and innovations.
Conclusion
Simon Faiss is a dedicated inventor whose work in semiconductor processing has made a significant impact in the industry. His innovative methods and collaborations continue to drive advancements in technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile