Regenstauf, Germany

Simon Faiss

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Infineon Technologies Ag. Active years: 2017.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Simon Faiss - Innovator in Semiconductor Processing

Introduction

Simon Faiss is a notable inventor based in Regenstauf, Germany. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method for processing semiconductor workpieces.

Latest Patents

Simon Faiss holds 1 patent for his invention titled "Method for processing a semiconductor workpiece and semiconductor workpiece." This patent describes a method that includes depositing a first metallization layer over a semiconductor workpiece, patterning the first metallization layer, and depositing a second metallization layer over the patterned first metallization layer. The process involves an electroless deposition technique, which includes immersing the patterned first metallization layer in a metal electrolyte.

Career Highlights

Simon Faiss is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has allowed him to explore and implement advanced technologies in semiconductor processing.

Collaborations

Throughout his career, Simon has collaborated with talented professionals, including Stephan Henneck and Evelyn Napetschnig. These collaborations have contributed to the advancement of semiconductor technologies and innovations.

Conclusion

Simon Faiss is a dedicated inventor whose work in semiconductor processing has made a significant impact in the industry. His innovative methods and collaborations continue to drive advancements in technology.

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