Eindhoven, Netherlands

Silvester J Oostra

This inventor holds 1 USPTO granted patent. Top assignee: U.S. Philips Corporation. Active years: 1991.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Silvester J Oostra. Retrieved from https://idiyas.com/inventor/silvester-j-oostra

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 1991

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1 patent (USPTO):Explore Patents

Title: Silvester J Oostra: Innovator in Dielectric Materials

Introduction

Silvester J Oostra is a notable inventor based in Eindhoven, Netherlands. He has made significant contributions to the field of dielectric materials, particularly through his innovative patent related to ceramic bodies.

Latest Patents

Oostra holds a patent for a ceramic body of a dielectric material based on barium titanate. This invention comprises 0.2 to 0.5 atom % of antimony and/or cerium as the donor material. The grain size of the dielectric material is less than 2 µm. The dielectric constant of the material exceeds 3500, and it maintains high electric resistance at elevated temperatures for extended periods. This ceramic material is particularly suitable for use in capacitors, especially multilayer capacitors.

Career Highlights

Silvester J Oostra is associated with U.S. Philips Corporation, where he has contributed to advancements in material science and engineering. His work has been instrumental in developing high-performance dielectric materials that meet the demands of modern electronic applications.

Collaborations

Oostra has collaborated with notable colleagues, including Cornelis W Berghout and Hendrik Damsma, to further enhance the research and development of dielectric materials.

Conclusion

Silvester J Oostra's innovative work in dielectric materials has paved the way for advancements in capacitor technology. His contributions continue to impact the field significantly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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