This inventor holds 1 USPTO granted patent and 20 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Sijung Yoo - Innovator in Ferroelectric Devices
Introduction
Sijung Yoo is an inventor based in Suwon-si, South Korea. He is known for his innovative work in the field of ferroelectric devices. Although he currently holds no granted patents, his contributions to technology are noteworthy.
Latest Patent Applications
Sijung Yoo has filed several patent applications that showcase his expertise. One of his latest applications is for a "FERROELECTRIC FIELD EFFECT TRANSISTOR, MEMORY DEVICE, AND NEURAL NETWORK DEVICE." This invention includes a channel layer, a gate electrode facing the channel layer, a ferroelectric layer between the channel layer and the gate electrode, and a channel intermediate layer. The channel layer and the channel intermediate layer each include an oxide semiconductor material, with a concentration of oxygen vacancies in the channel intermediate layer being greater than that in the channel layer.
Another significant application is for a "VERTICAL NON-VOLATILE MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME." This device comprises a plurality of cell strings, each containing a channel layer, a charge tunneling layer, a charge trap layer, and multiple charge blocking layers. The second charge blocking layer includes a first layer made of ferroelectric or anti-ferroelectric material, and a second layer designed to facilitate the crystallization of the first layer.
Conclusion
Sijung Yoo's innovative patent applications reflect his commitment to advancing technology in the field of ferroelectric devices. His work has the potential to contribute significantly to future developments in memory devices and electronic apparatuses.