Incheon, South Korea

Sihoon Lee

This inventor holds 1 USPTO granted patent. Top assignee: Lg Display Co., Ltd.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sihoon Lee. Retrieved from https://idiyas.com/inventor/sihoon-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Sihoon Lee: Innovator in Error Diffusion Methods

Introduction: Sihoon Lee is a prominent inventor based in Incheon, South Korea. He is known for his contributions to the field of liquid crystal displays through innovative error diffusion methods. With a focus on enhancing display technology, Lee has made significant strides in improving image quality.

Latest Patents: Sihoon Lee holds a patent for an "Error diffusion method and liquid crystal display using the same." This patent outlines a method that involves simultaneously receiving pixel data, quantizing it, and diffusing quantization errors to enhance the display quality. The process includes using error diffusion masks to manage and store quantization errors effectively.

Career Highlights: Lee is currently employed at LG Display Co., Ltd., a leading company in the display technology sector. His work has contributed to advancements in liquid crystal display technology, making it more efficient and effective for various applications.

Collaborations: Sihoon Lee collaborates with talented coworkers, including Junghwan Lee and Kyungjoon Kwon. Their combined expertise fosters innovation and drives the development of cutting-edge display technologies.

Conclusion: Sihoon Lee's contributions to error diffusion methods in liquid crystal displays highlight his role as an influential inventor in the technology sector. His work continues to impact the quality of visual displays, showcasing the importance of innovation in this field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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