Chichibu, Japan

Sigemasa Nakamura

This inventor holds 1 USPTO granted patent. Top assignee: Showa Denko K.k.. Active years: 1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sigemasa Nakamura. Retrieved from https://idiyas.com/inventor/sigemasa-nakamura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 83(Granted Patents)


Company Filing History:


Years Active: 1997

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1 patent (USPTO):Explore Patents

Title: Sigemasa Nakamura: Innovator in Semiconductor Technology

Introduction

Sigemasa Nakamura is a prominent inventor based in Chichibu, Japan. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of light-emitting diodes.

Latest Patents

Nakamura holds a patent for a semiconductor light-emitting diode. This innovative device includes a compound semiconductor substrate and a double-hetero structure of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P as an active layer. The upper clad layer of this double-hetero structure has a larger band gap energy than that of the active layer and has a thickness ranging from 3 to 50 micrometers. He has 1 patent to his name.

Career Highlights

Nakamura is associated with Showa Denko K.K., where he has been instrumental in advancing semiconductor technologies. His work has had a lasting impact on the industry, paving the way for more efficient and effective light-emitting devices.

Collaborations

Throughout his career, Nakamura has collaborated with notable colleagues, including Yasuyuki Sakaguchi and Yasuo Hosokawa. These partnerships have contributed to the success of his projects and innovations.

Conclusion

Sigemasa Nakamura's work in semiconductor technology exemplifies the spirit of innovation. His contributions continue to influence the field and inspire future advancements in light-emitting diodes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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