Böblingen, Germany

Siegfried Beck

This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 1976.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Siegfried Beck. Retrieved from https://idiyas.com/inventor/siegfried-beck-tvnd13vw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 1976

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1 patent (USPTO):Explore Patents

Title: Siegfried Beck: Innovator in Ion Implantation Technology

Introduction

Siegfried Beck is a notable inventor based in Böblingen, Germany. He has made significant contributions to the field of ion implantation technology, particularly through his innovative methods involving boron ions.

Latest Patents

One of his key patents is titled "Method of implantation of boron ions utilizing a boron oxide ion source." This patent describes a method of ion implantation in which boron ions are generated by introducing a boron-oxide containing material vapor into a conventional gas discharge ion generation source. This innovative approach enhances the efficiency and effectiveness of ion implantation processes.

Career Highlights

Siegfried Beck is associated with the International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to explore and develop advanced technologies that have applications in various industries.

Collaborations

Throughout his career, Siegfried has collaborated with notable colleagues, including Karl Brack and Peter Gansauge. These collaborations have contributed to the advancement of technology in their respective fields.

Conclusion

Siegfried Beck's contributions to ion implantation technology, particularly through his patented methods, highlight his role as an influential inventor in the industry. His work continues to impact the field and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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