Caen, France

Sidina Wane

This inventor holds 2 USPTO granted patents and 6 published patent applications. Top assignee: Nxp B.v.. Active years: 2015-2016.

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2015-2016

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2 patents (USPTO):Explore Patents

Title: Sidina Wane: Innovator in RF Technology

Introduction

Sidina Wane is a notable inventor based in Caen, France. He has made significant contributions to the field of radio frequency (RF) technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and functionality of RF signal detection and coupling.

Latest Patents

One of Sidina Wane's latest patents is the FET RF power detector. This invention features an FET RF signal detector circuit that includes two unbalanced differential transistor pair circuits. A current mirror output circuit is integrated to generate an output current derived from the currents flowing in these differential transistor pair circuits. The first unbalanced differential transistor pair circuit consists of two branches, each with a respective tail, and a first variable resistor positioned between the branch tails. This circuit connects to a first current source tail arrangement. The second unbalanced differential transistor pair circuit also comprises two branches, each with a respective tail, and a second variable resistor between the branch tails, connecting to a second current source tail arrangement.

Another significant patent is the Lange coupler and fabrication method. This invention includes a Lange coupler that features an unbroken peripheral ground conductor surrounding input, through, coupled, and isolated conductor strips. These strips are coupled to the input, through, coupled, and isolated ports of the Lange coupler, respectively. The arrangement of the peripheral ground conductor and input and through conductor strips is designed on a first metal layer.

Career Highlights

Sidina Wane is currently employed at NXP B.V., where he continues to innovate in the field of RF technology. His work has been instrumental in advancing the capabilities of RF signal detection and coupling methods.

Collaborations

Some of Sidina's coworkers include Claire Boucey and Fabian Rivière, who contribute to the collaborative environment at NXP B.V. Their teamwork fosters innovation and drives the development of cutting-edge technologies.

Conclusion

Sidina Wane is a prominent inventor whose work in RF technology has led to valuable patents that enhance signal detection and coupling methods. His contributions continue to impact the field positively.

Profile summary based on public USPTO records.
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