New York, NY, United States of America

Siddharth Rupavatharam

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Siddharth Rupavatharam. Retrieved from https://idiyas.com/inventor/siddharth-rupavatharam-00zd7vwa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Siddharth Rupavatharam and Ultrasonic Contact Localization

Introduction

Siddharth Rupavatharam is an inventor based in New York, NY (US), whose patent work includes an ultrasonic sensor system for identifying contact with a device’s bumper. His listed patent portfolio includes 1 patent, and he is associated with Samsung Electronics Ltd.

Latest Patents

Rupavatharam is named on “Ultrasonic piezoelectric transceiver sensor for full surface contact localization.” The patent describes methods and systems that use acoustic sensors on the inner surface of a bumper to capture a combined acoustic signal. A trained machine-learning model analyzes that signal to identify the contact region and estimate its intensity. The apparatus can then use the contact information, together with its operating mode, to determine how it should move.

Career Highlights

The disclosed invention combines ultrasonic sensing and machine learning to localize contact across a bumper’s surface. By estimating both where contact occurs and how intense it is, the system can provide information relevant to an apparatus’s motion.

Collaborations

Rupavatharam is associated with Samsung Electronics Ltd. His listed coworkers include Adarsh K Kosta and Alexis M Burns.

Conclusion

Siddharth Rupavatharam’s patent highlights an approach to contact localization that combines acoustic sensing with machine-learning analysis to inform an apparatus’s movement.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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