Siao-Jing Li

Title: Siao-Jing Li: Innovator in Semiconductor Technology

Introduction

Siao-Jing Li is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative methods for forming semiconductor structures, which are crucial for the advancement of electronic devices.

Latest Patents

Siao-Jing Li's latest patents include a semiconductor structure and a method for forming thereof. One of the key methods involves the formation of a sacrificial gate structure over a fin structure. This process includes several operations, such as removing the sacrificial gate layer to create a gate trench that exposes the sacrificial dielectric layer. Additionally, a doped region is formed in the fin structure, and an interfacial layer is created over the fin structure within the gate trench. Another patent also details a similar semiconductor structure, emphasizing the removal of the sacrificial dielectric layer to expose the substrate and the formation of a metal gate structure over the interfacial layer.

Career Highlights

Siao-Jing Li is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His expertise and innovative approaches have positioned him as a valuable asset in the development of advanced semiconductor technologies.

Collaborations

Throughout his career, Siao-Jing Li has collaborated with notable colleagues, including I-Sheng Chen and Yi-Jing Li. These collaborations have further enhanced his research and development efforts in semiconductor technology.

Conclusion

Siao-Jing Li's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of electronic devices.