Company Filing History:
Years Active: 2015-2017
Title: Si-Young Park: Innovator in Memory Cell Technology
Introduction
Si-Young Park is a prominent inventor based in Boise, ID (US), known for her significant contributions to the field of semiconductor technology. With a total of two patents to her name, she has made remarkable advancements in memory cell design and functionality.
Latest Patents
Si-Young Park's latest patents focus on memory cells and semiconductor structures that include electrodes made of metal silicide. These memory cells, such as Conductive Bridging Random Access Memory (CBRAM) cells, incorporate an ion source material positioned over an active material, with a metal silicide electrode placed above the ion source. The ion source material can consist of chalcogenide materials or metals. The patents detail methods for forming these memory cells, which include creating a first electrode, an active material, an ion source material, and a second electrode made of metal silicide. Additionally, the patents describe techniques for adhering materials like copper and tungsten through the formation of tungsten silicide.
Career Highlights
Si-Young Park is currently employed at Micron Technology Incorporated, where she continues to innovate in the semiconductor industry. Her work has been instrumental in developing advanced memory technologies that enhance the performance and efficiency of electronic devices.
Collaborations
Throughout her career, Si-Young Park has collaborated with notable colleagues, including Dale Collins and Marko Milojevic. These partnerships have fostered a creative environment that encourages the exchange of ideas and technological advancements.
Conclusion
Si-Young Park is a trailblazer in the field of memory cell technology, with her patents reflecting her innovative spirit and technical expertise. Her contributions at Micron Technology Incorporated continue to shape the future of semiconductor applications.