Seoul, South Korea

Si-Nae Hwang

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Si-Nae Hwang. Retrieved from https://idiyas.com/inventor/si-nae-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2022

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Si-Nae Hwang: Inventor in Data Storage Technology

Introduction

Si-Nae Hwang is an inventor based in Seoul, South Korea, and works at Samsung Electronics Co., Ltd. His patent work focuses on storage devices and data processing.

Latest Patents

Hwang is associated with 1 patent, titled “Storage Device and Data Processing Method Thereof.” The invention describes a storage device with a memory device containing a metadata area and a journal data area. A memory controller manages the writing of metadata blocks and journal data blocks to their respective areas. The journal data block stores both log information related to the metadata and information about where the metadata block is stored.

Career Highlights

Hwang’s work at Samsung Electronics Co., Ltd. is reflected in his contribution to technology for organizing metadata and journal data in storage systems. The patent describes a method intended to support the management and processing of this information.

Collaborations

Hwang’s listed coworkers include Hyun-chul Park and Su-Ryun Lee.

Conclusion

Si-Nae Hwang’s patent highlights his contribution to storage-device design and data processing through the coordinated handling of metadata and journal data.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…