Chungcheongbuk-do, South Korea

Si-In Kim

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Sfc Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Si-In Kim. Retrieved from https://idiyas.com/inventor/si-in-kim-iujwy9nv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

 

Average Co-Inventor Count = 12.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
Loading Chart...
1 patent (USPTO):Explore Patents

Title: Si-In Kim: Innovator in Organic Light-Emitting Devices

Introduction

Si-In Kim is a notable inventor based in Chungcheongbuk-do, South Korea. She has made significant contributions to the field of organic light-emitting devices (OLEDs). Her innovative work focuses on enhancing the efficiency and applicability of these devices in various technologies.

Latest Patents

Si-In Kim holds a patent for an organic light-emitting device. This invention employs an anthracene derivative compound with a unique structure, incorporating a benzofuran structure into the anthracene backbone. The device utilizes a polycyclic compound as a dopant in the light emission layer. This design significantly improves external quantum efficiency, making it suitable for lighting devices and various display technologies, including flat, flexible, and wearable displays. She has 1 patent to her name.

Career Highlights

Si-In Kim is associated with Sfc Ltd., where she continues to develop her innovative ideas. Her work has positioned her as a key player in the advancement of OLED technology.

Collaborations

Some of her notable coworkers include Tae-Gyun Lee and Joon-ho Kim, who contribute to her research and development efforts.

Conclusion

Si-In Kim's contributions to organic light-emitting devices highlight her role as an innovator in the field. Her work not only advances technology but also opens new possibilities for future applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…