Gyeongsangbuk-do, South Korea

Si Bum Jun

This inventor holds 2 USPTO granted patents. Top assignee: Hyundai Electronics Industries Co. Ltd.. Active years: 2000-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Si Bum Jun. Retrieved from https://idiyas.com/inventor/si-bum-jun-28zguena

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 39(Granted Patents)


Company Filing History:


Years Active: 2000-2001

Loading Chart...
2 patents (USPTO):Explore Patents

Title: **Si Bum Jun: Innovator in Semiconductor Sensing Technologies**

Introduction

Si Bum Jun is a prominent inventor located in Kyungsangbuk-do, South Korea. With a strong focus on semiconductor technologies, he has developed two significant patents that enhance the efficiency and reliability of sensing circuits for memory devices. His work reflects a deep understanding of electronic systems and a commitment to innovation.

Latest Patents

Si Bum Jun's latest patents include:

1. **Sensing Circuit for Semiconductor Device and Sensing Method Using the Same**

This patent introduces a sensing circuit that allows the sensing of selected nonvolatile memory cells at low voltage, low power, and fast speed. Noteworthy features include:

- A bitline connected to a drain terminal of a memory cell through a Y-decoder.

- A senseline for sensing and forwarding data from the memory cell.

- A switching unit to alternate between the bitline and senseline.

- A first and second current supply unit that supply current to both the bitline and senseline, respectively.

- A voltage level shifter that creates a voltage difference between the bitline and the senseline.

- A sense MOS transistor connected to the senseline and ground voltage, boosting the circuit's performance.

2. **Device for Sensing Data in a Multi-Bit Memory Cell Using a Multistep**

This invention provides a robust device and method for sensing data in multi-bit memory cells. Key features include:

- A multistep current source unit that delivers quantized voltages smaller than the threshold voltage distribution in selected memory cells.

- An analog-to-digital converter that compares these quantized voltages with several reference voltages, producing a binary output that represents the state of the memory cell.

- Enhanced sensing reliability, speed, and voltage gaps relative to threshold distributions set this device apart in the market.

Career Highlights

Si Bum Jun is currently employed at Hyundai Electronics Industries Co. Ltd., where he has made considerable contributions to the field of semiconductor development. His inventions are pivotal in improving the performance of memory devices, making them faster and more reliable.

Collaborations

Throughout his career, Si Bum Jun has collaborated with talented colleagues, including Dae Mann Kim and Woong Lim Choi. Together, they have forged innovations that have advanced the semiconductor industry.

Conclusion

Si Bum Jun stands out as an innovative inventor dedicated to enhancing semiconductor technologies. His patents reflect his expertise and commitment to creating solutions that address the evolving demands of electronic systems. As technology continues to progress, Jun's contributions will undoubtedly play a vital role in shaping the future of memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…