Kanagawa, Japan

Shyoji Hirao

This inventor holds 1 USPTO granted patent. Top assignee: Fujitsu Corporation. Active years: 2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shyoji Hirao. Retrieved from https://idiyas.com/inventor/shyoji-hirao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Shyoji Hirao: Innovator in Semiconductor Manufacturing

Introduction

Shyoji Hirao is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative methods that enhance device performance.

Latest Patents

Hirao holds a patent for a semiconductor device manufacturing method. This method involves several key steps, including the formation of a groove on an insulating film over a semiconductor substrate, the deposition of a first copper film through sputtering, and the subsequent reflowing and growth of a second copper film. The process aims to improve the embedding of copper into grooves, thereby reducing resistance and enhancing electromigration resistance in copper wirings.

Career Highlights

Shyoji Hirao has dedicated his career to advancing semiconductor technology. His work at Fujitsu Corporation has positioned him as a key player in the industry, where he continues to innovate and develop new manufacturing techniques.

Collaborations

Hirao has collaborated with notable colleagues, including Hideo Takagi and Shigetaka Uji. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in semiconductor technology.

Conclusion

Shyoji Hirao's contributions to semiconductor manufacturing exemplify the importance of innovation in technology. His patented methods not only enhance device performance but also pave the way for future advancements in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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