Zhubei, Taiwan

Shyh-Chyi Yang


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Shyh-Chyi Yang: Innovator in Memory Device Technology

Introduction

Shyh-Chyi Yang is a notable inventor based in Zhubei, Taiwan. He has made significant contributions to the field of memory devices, showcasing his expertise through innovative patents. His work is particularly recognized for addressing critical challenges in memory technology.

Latest Patents

One of Shyh-Chyi Yang's key patents is for a memory device capable of releasing stress voltage. This invention includes at least one memory cell, a bit line connected to the memory cell, a write controller, and a write driver that operates based on a logic signal. Additionally, it features a negative voltage generator that provides a reference voltage to the write driver and a protector that can release stress voltage from the write driver. This innovative design enhances the reliability and performance of memory devices.

Career Highlights

Shyh-Chyi Yang is currently employed at M31 Technology Corporation, where he continues to develop cutting-edge technologies in the field of memory devices. His work has been instrumental in advancing the capabilities of memory technology, making significant impacts in various applications.

Collaborations

Shyh-Chyi Yang collaborates with talented professionals in his field, including his coworker Wei-Chiang Shih. Their combined expertise contributes to the innovative environment at M31 Technology Corporation.

Conclusion

Shyh-Chyi Yang's contributions to memory device technology exemplify his dedication to innovation and excellence. His patent for a memory device capable of releasing stress voltage is a testament to his inventive spirit and technical prowess.

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