Yokohama, Japan

Shuuzoo Sano

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1988.


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 72(Granted Patents)


Company Filing History:


Years Active: 1988

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1 patent (USPTO):Explore Patents

Title: Innovations of Shuuzoo Sano in Microwave Assisting Sputtering

Introduction

Shuuzoo Sano is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of materials science, particularly in the area of film formation technologies. His innovative approach has led to the development of a unique method and apparatus for microwave assisting sputtering.

Latest Patents

Shuuzoo Sano holds 1 patent for his invention titled "Method and apparatus for microwave assisting sputtering." This patent discloses several types of apparatuses designed to form films at an increased rate, which is essential for implementing microwave assisting sputtering on an industrial scale. The key feature of this invention is the uniform maintenance of plasma across the entire surface of the target material, which prevents thermal destruction during the sputtering process. Additionally, the invention includes arrangements of magnetic devices to protect the substrate from plasma damage while effectively introducing plasma for film formation.

Career Highlights

Shuuzoo Sano is associated with Hitachi, Ltd., a leading company in technology and innovation. His work at Hitachi has allowed him to explore advanced techniques in sputtering and film formation, contributing to the company's reputation for cutting-edge research and development.

Collaborations

Shuuzoo Sano has collaborated with notable colleagues such as Hiroshi Saito and Yasumichi Suzuki. These collaborations have fostered a productive environment for innovation and have led to advancements in their respective fields.

Conclusion

Shuuzoo Sano's contributions to microwave assisting sputtering exemplify the importance of innovation in technology. His patent reflects a significant advancement in film formation techniques, showcasing his expertise and commitment to research.

Profile summary based on public USPTO records.
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