Kanagawa, Japan

Shuuichi Tahara


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: **Innovator Spotlight: Shuuichi Tahara**

Introduction

Shuuichi Tahara is a prominent inventor based in Kanagawa, Japan, recognized for his contributions to semiconductor technology. With a focus on enhancing nonvolatile memory devices, Tahara's innovative solutions aim to improve data stability and reliability in memory applications.

Latest Patents

Tahara holds a patent for a **Nonvolatile memory device having data read operation using a reference cell and method thereof**. This invention features a semiconductor memory device that includes a reference cell, a first memory cell, and a second memory cell positioned closer to the first memory cell than the reference cell. The device employs a data read circuit that effectively identifies stored data by utilizing the electrical states of the reference and memory cells. This inventive design mitigates the influence of electrical performance variations in memory cells, enabling stable data retrieval.

Career Highlights

Shuuichi Tahara is affiliated with NEC Electronics Corporation, where he continues to drive advancements in semiconductor technologies. His work focuses on enhancing the functionality and efficiency of memory devices, contributing to the organization's reputation as a leader in electronic innovation.

Collaborations

In his professional journey, Tahara collaborates closely with colleague Takeshi Okazawa, emphasizing the spirit of teamwork and shared expertise in their research and development efforts. Together, they strive to push the boundaries of technology in the semiconductor field.

Conclusion

Shuuichi Tahara's innovative approach to semiconductor memory technology significantly impacts the industry. His patented technology demonstrates a commitment to addressing challenges in data storage and retrieval, ensuring that his contributions will influence the evolution of memory devices for years to come.

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