Tokyo, Japan

Shunji Ishibashi


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Shunji Ishibashi: Innovator in Silicon Wafer Technology

Introduction

Shunji Ishibashi is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the area of silicon wafers. His innovative methods have paved the way for advancements in the manufacturing processes of these essential components.

Latest Patents

Ishibashi holds a patent for a method of gettering unintentional mobile impurities in silicon wafers. This method involves the production of a damaged portion on the reverse side of a silicon wafer. The wafer is then placed in a high-temperature vacuum environment, allowing the unintentional mobile impurities to be trapped by the damaged portion and subsequently evacuated to the vacuum ambience.

Career Highlights

Throughout his career, Shunji Ishibashi has worked with prominent companies in the semiconductor industry. He has been associated with Mitsubishi Materials Corporation and Nippon Silicon Kabushiki Kaisha, where he has contributed to various projects and innovations.

Collaborations

Ishibashi has collaborated with notable colleagues, including Hisaaki Suga and Yoshinobu Nakada. Their combined expertise has further enhanced the development of technologies in the semiconductor field.

Conclusion

Shunji Ishibashi's work in silicon wafer technology exemplifies the impact of innovative thinking in the semiconductor industry. His contributions continue to influence advancements in this critical area of technology.

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