Kokubu, Japan

Shunichi Kuwa

This inventor holds 1 USPTO granted patent. Top assignee: Kyocera Corporation. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shunichi Kuwa. Retrieved from https://idiyas.com/inventor/shunichi-kuwa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 69(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Shunichi Kuwa: Thin-Film Capacitor Innovation

Introduction

Shunichi Kuwa is an inventor associated with Kokubu, Japan, and Kyocera Corporation. His work includes a patent for a thin-film electronic device and a circuit board mounting the device.

Latest Patents

Kuwa’s listed patent, “Thin Film Electronic Device and Circuit Board Mounting the Same,” describes a thin-film capacitor built on a carrier substrate. Its thin-film element contains an insulating layer and multiple electrode layers, with designated areas that have no insulating layer. External terminals connect electrically to corresponding electrode layers and are bonded to the carrier substrate through those layers. The design aims to provide sufficient insulation and a higher breakdown voltage. Kuwa is credited with 1 patent in the information provided.

Career Highlights

Kuwa’s patent work addresses the design and mounting of thin-film electronic components, with a focus on insulation performance and breakdown voltage. The supplied information associates him with Kyocera Corporation.

Collaborations

Shoken Nagakari and Shigeo Kounushi are identified as Kuwa’s coworkers. The available information does not specify their roles in the patent.

Conclusion

Shunichi Kuwa’s listed invention reflects a practical approach to thin-film capacitor design, combining layered electrodes and external terminals to support improved insulation and higher breakdown voltage.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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