Shanghai, China

Shun Yao

This inventor holds 1 USPTO granted patent. Top assignee: East China University of Science and Technology. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shun Yao. Retrieved from https://idiyas.com/inventor/shun-yao-vhbh2xp7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Shun Yao: Innovator in Dielectric Materials

Introduction

Shun Yao is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of dielectric materials, showcasing his innovative spirit through his patented work. His research focuses on the development of advanced materials that have practical applications in various industries.

Latest Patents

Shun Yao holds a patent for a dielectric material and the manufacturing method thereof. The patent describes a process that involves subjecting a foamed sphere obtained by primary foaming to a second foaming in a second molding chamber filled with CO at a second temperature, ranging from 20° C. below T to 5° C. below T, and under a second pressure of 15-20 MPa for 30-3600 minutes. This method results in a dielectric material that is both efficient and effective for various applications.

Career Highlights

Shun Yao is affiliated with the East China University of Science and Technology, where he continues to engage in research and development. His work has garnered attention for its innovative approach to material science, particularly in the area of dielectric materials.

Collaborations

Shun Yao has collaborated with notable colleagues, including Ling Zhao and Yichong Chen. These partnerships have contributed to the advancement of research in their respective fields.

Conclusion

Shun Yao's contributions to the field of dielectric materials exemplify his dedication to innovation and research. His patented work not only highlights his expertise but also paves the way for future advancements in material science.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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