Nishikasugai-gun, Japan

Shuichi Nagahaka

This inventor holds 1 USPTO granted patent. Top assignee: Denso Corporation. Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shuichi Nagahaka. Retrieved from https://idiyas.com/inventor/shuichi-nagahaka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Shuichi Nagahaka: Patent Inventor at Denso Corporation.

Introduction

Shuichi Nagahaka is an inventor associated with Denso Corporation. Based in Nishikasugai-gun, Japan, he is credited with 1 patent.

Latest Patents

Nagahaka’s patent, “Method for Forming and Patterning Film,” describes a way to pattern metallic films on a silicon substrate. The method uses a first metallic film that contacts both an insulation film and a conductive portion, along with a second metallic film that acts as a stress-adjustment layer. By controlling stress at the interface, the process can make adhesion to the insulation film weaker than adhesion to the conductive portion. An adhesive sheet can then selectively remove the metallic film from the insulation film while leaving it on the conductive portion. The approach is intended to make film patterning stable, straightforward, and low-cost.

Career Highlights

Nagahaka’s listed patent reflects work on materials processing and semiconductor fabrication, particularly selective patterning of metallic films. His professional association is with Denso Corporation.

Collaborations

Takeshi Miyajima and Ichiharu Kondo are identified as Nagahaka’s coworkers.

Conclusion

Shuichi Nagahaka’s patent presents a practical method for selectively patterning metallic films, highlighting his contribution to materials and semiconductor manufacturing at Denso Corporation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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