Nara, Japan

Shuhji Enomoto

This inventor holds 1 USPTO granted patent. Top assignee: Sharp Kabushiki Kaisha Corporation. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shuhji Enomoto. Retrieved from https://idiyas.com/inventor/shuhji-enomoto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 4.0

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Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Shuhji Enomoto: Innovator in Semiconductor Technology

Introduction

Shuhji Enomoto is a notable inventor based in Nara, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high withstand voltage transistors. His innovative work has led to advancements that are crucial for modern electronic devices.

Latest Patents

Enomoto holds a patent for a small size transistor semiconductor device capable of withstanding high voltage. This invention features a high withstand voltage transistor with small dimensions, including an element isolating region. The semiconductor device is designed with an active region, gate electrode, channel region, source and drain regions, and a drift region, all of which work together to enhance performance and reliability.

Career Highlights

Shuhji Enomoto is associated with Sharp Kabushiki Kaisha Corporation, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's portfolio but has also impacted the broader electronics industry.

Collaborations

Enomoto has collaborated with notable colleagues such as Yuji Fukui and Kazuhiko Yoshino. These partnerships have fostered innovation and have been essential in the development of cutting-edge semiconductor solutions.

Conclusion

Shuhji Enomoto's contributions to semiconductor technology exemplify the importance of innovation in the electronics field. His patent for a high withstand voltage transistor showcases his expertise and commitment to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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