Company Filing History:
Years Active: 2006
Title: Shu Tong Chang: Innovator in MOSFET Technology
Introduction: Shu Tong Chang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOSFET structures. His innovative work has led to the creation of a unique patent that enhances the performance of electronic devices.
Latest Patents: Shu Tong Chang holds a patent for a "Strained silicon carbon alloy MOSFET structure and fabrication method thereof." This patent describes a MOSFET structure that utilizes a strained silicon carbon alloy, which includes a substrate, a graded SiGe layer, a relaxed buffer layer, a strained silicon carbon alloy channel layer, a gate dielectric layer, a polysilicon gate electrode (or metal gate electrode), and a source/drain region. This invention aims to improve the efficiency and performance of MOSFET devices.
Career Highlights: Shu Tong Chang is affiliated with the Industrial Technology Research Institute, where he has been instrumental in advancing semiconductor research and development. His work has not only contributed to academic knowledge but has also had practical applications in the industry.
Collaborations: Some of his notable coworkers include Min-Hung Lee and Shing Chii Lu, who have collaborated with him on various projects within the field of semiconductor technology.
Conclusion: Shu Tong Chang's innovative contributions to MOSFET technology exemplify the importance of research and development in advancing electronic devices. His patent and work at the Industrial Technology Research Institute highlight his role as a key figure in the semiconductor industry.