The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Mar. 04, 2004
Applicants:
Min-hung Lee, Taipei, TW;
Shu Tong Chang, Hsinchu, TW;
Shing Chii LU, Hsinchu, TW;
Chee-wee Liu, Taipei, TW;
Inventors:
Min-Hung Lee, Taipei, TW;
Shu Tong Chang, Hsinchu, TW;
Shing Chii Lu, Hsinchu, TW;
Chee-Wee Liu, Taipei, TW;
Assignee:
Industrial Research Technology Institute, Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
A MOSFET structure utilizing strained silicon carbon alloy and fabrication method thereof. The MOSFET structure includes a substrate, a graded SiGe layer, a relaxed buffer layer, a strained silicon carbon alloy channel layer, a gate dielectric layer, a polysilicon gate electrode (or metal gate electrode) and a source/drain region.