Company Filing History:
Years Active: 2006
Title: Shing Chii Lu: Innovator in MOSFET Technology
Introduction
Shing Chii Lu is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOSFET structures. His innovative work has led to advancements that enhance the performance and efficiency of electronic devices.
Latest Patents
Shing Chii Lu holds a patent for a "Strained silicon carbon alloy MOSFET structure and fabrication method thereof." This patent describes a MOSFET structure that utilizes a strained silicon carbon alloy, which includes a substrate, a graded SiGe layer, a relaxed buffer layer, a strained silicon carbon alloy channel layer, a gate dielectric layer, a polysilicon gate electrode (or metal gate electrode), and a source/drain region. This invention represents a significant step forward in the design and fabrication of MOSFETs.
Career Highlights
Lu is affiliated with the Industrial Technology Research Institute, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to academic knowledge but has also had practical applications in the industry.
Collaborations
Some of his notable coworkers include Min-Hung Lee and Shu Tong Chang, who have collaborated with him on various projects within the field of semiconductor research.
Conclusion
Shing Chii Lu's contributions to MOSFET technology exemplify the innovative spirit of modern inventors. His work continues to influence the development of efficient electronic components, showcasing the importance of research and innovation in technology.