Kobe, Japan

Shu Takeuchi


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 1997

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1 patent (USPTO):Explore Patents

Title: The Innovations of Shu Takeuchi

Introduction

Shu Takeuchi is a notable inventor based in Kobe, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique patent that enhances the functionality of thin-film transistors.

Latest Patents

Shu Takeuchi holds a patent for a top gate thin-film transistor. This invention involves the formation of a transparent insulation film on a glass substrate. Source and drain electrodes are created on this film, with their ends positioned in a spaced and opposing manner. The substrate undergoes treatment with PH.sub.3 plasma to diffuse phosphorus atoms, resulting in a doped surface layer. An amorphous silicon (a-Si) semiconductor layer is then formed to bridge the space between the source and drain electrodes. A gate insulation film is applied over the semiconductor layer, followed by the placement of a metal gate electrode. This design allows for improved performance in electronic devices.

Career Highlights

Shu Takeuchi is associated with Hosiden Corporation, where he has been instrumental in advancing semiconductor technologies. His work has garnered attention for its innovative approach to thin-film transistors.

Collaborations

He has collaborated with notable colleagues, including Yasuhiro Ukai and Tomihisa Sunata. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Shu Takeuchi's contributions to the field of semiconductor technology, particularly through his patent for a top gate thin-film transistor, highlight his innovative spirit and dedication to advancing electronic device performance. His work continues to influence the industry and inspire future innovations.

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