Shu-Li Wu

Title: Innovations of Shu-Li Wu

Introduction

Shu-Li Wu is a notable inventor based in Nan-Tao, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming flash memory cells and high-refractive index oxide films.

Latest Patents

Shu-Li Wu holds 2 patents that showcase his innovative approaches. His first patent, titled "Method for forming flash memory cell," outlines a process that begins with providing a substrate, followed by the sequential formation of a gate dielectric layer, a first polysilicon layer, and a hard mask layer. The method includes removing portions of these layers to create holes that expose the substrate, forming a dielectric layer through a high-density plasma chemical vapor deposition process, and concluding with the removal of the hard mask layer. His second patent, "Method for forming a high-RI oxide film to reduce fluorine diffusion in HDP FSG process," describes a technique for creating a high-refractive index dielectric liner layer. This layer is designed to prevent the out-diffusion of fluorine substances in an intermetal dielectric layer of a semiconductor device, utilizing a chemical mechanism polishing process to refine the final structure.

Career Highlights

Shu-Li Wu is currently employed at Macronix International Co., Ltd., where he continues to advance semiconductor technologies. His work has been instrumental in enhancing the performance and reliability of memory devices.

Collaborations

He collaborates with esteemed colleagues such as Pei-Ren Jeng and Ping-Yi Chang, contributing to a dynamic research environment that fosters innovation.

Conclusion

Shu-Li Wu's contributions to semiconductor technology through his patents and collaborative efforts highlight his role as a key innovator in the field. His work continues to influence advancements in memory cell design and fabrication processes.