Yavne, Israel

Shoval Zoran

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Soreq Nuclear Research Center. Active years: 2024.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: The Innovations of Inventor Shoval Zoran

Introduction: Shoval Zoran is a prominent inventor based in Yavne, Israel, known for his contributions to the field of semiconductor technology. With a focus on high-voltage applications, Zoran holds a patent that showcases his innovative approach to diode devices.

Latest Patents: Zoran's significant patent is for a High-Voltage Fast-Avalanche Diode. This invention involves a method of utilizing a diode device that incorporates an active region made from a 525-micron thick, 10 kΩ-cm, n-type, float zone wafer. By operating the diode as a silicon-avalanche semiconductor switch, Zoran's invention offers advancements in efficiency and performance for high-voltage applications.

Career Highlights: Shoval Zoran is affiliated with the Soreq Nuclear Research Center, where he applies his technical expertise to cutting-edge research and development. His role at the center allows him to collaborate with fellow experts and work on projects that push the boundaries of current technology.

Collaborations: Zoran's collaboration with his coworker, Gil Atar, exemplifies the teamwork essential in research environments. Together, they contribute to the dynamic atmosphere of innovation at Soreq Nuclear Research Center, fostering an environment where new ideas can flourish.

Conclusion: Through his work, Shoval Zoran continues to make significant strides in the field of semiconductor technology. His patent on the High-Voltage Fast-Avalanche Diode not only highlights his inventive spirit but also enhances the capabilities within the industry. Zoran's contributions showcase the importance of innovation in driving technological advancement.

Profile summary based on public USPTO records.
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