Toyokawa, Japan

Shouichi Onda


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Shouichi Onda: Innovator in Silicon Carbide Crystal Production

Introduction

Shouichi Onda is a notable inventor based in Toyokawa, Japan. He has made significant contributions to the field of materials science, particularly in the production of silicon carbide (SiC) crystals. His innovative methods have implications for various applications, including semiconductor technology.

Latest Patents

Onda holds a patent for a "Method and apparatus for producing silicon carbide crystal." This patent describes a technique to produce SiC crystals in a shape suitable for use as wafers. The method involves placing a guide around a SiC crystal substrate to control the growth direction of the crystal. By adjusting the temperature of the guide to be higher than the sublimation temperature of SiC, Onda's method effectively restricts the growth of the crystal, allowing for precise shaping. When the guide is formed in a hexagonal tube shape, the resulting SiC crystal can be produced in a hexagonal pole shape, aligning with specific directions of the SiC crystal substrate.

Career Highlights

Shouichi Onda is associated with Denso Corporation, a leading global automotive components manufacturer. His work at Denso has allowed him to apply his innovative ideas in a practical setting, contributing to advancements in materials used in automotive applications.

Collaborations

Onda has collaborated with notable colleagues, including Haruyoshi Kuriyama and Hiroyuki Kondo. These collaborations have fostered a productive environment for innovation and development in the field of silicon carbide technology.

Conclusion

Shouichi Onda's contributions to the production of silicon carbide crystals highlight his role as an influential inventor in materials science. His patented methods not only advance the technology but also pave the way for future innovations in semiconductor applications.

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