Denso Corporation

Shouichi Onda

Kazukuni Hara

Hiroyuki Kondo

Haruyoshi Kuriyama

To produce a SiC crystal in a shape which is used as a wafer, a guide is disposed around a SiC crystal substrate so as to cover a peripheral portion of the SiC crystal substrate. Temperature of the guide may be made higher than the sublimation temperature of the SiC when a SiC crystal is disposed upon and caused to grow on the SiC crystal substrate, thereby controlling and restricting the SiC crystal growth in the direction of the guide. Additionally, when the guide is formed in a substantially hexagonal tube shape, the SiC crystal can be produced in a hexagonal pole shape. In this case, when alignment is made between each diagonal passing through a center of the hexagon shape of the guide and specific direction (<11{overscore (2)}0> or <1{overscore (1)}00> of the SiC crystal substrate), the SiC crystal becomes aligned accordingly.

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Toyokawa, Japan

Shouichi Onda