Hyogo, Japan

Shoichi Takasuka

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Nuvoton Technology Corporation Japan. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shoichi Takasuka. Retrieved from https://idiyas.com/inventor/shoichi-takasuka-u9duvilc

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Shoichi Takasuka and Semiconductor Laser Innovation.

Introduction

Shoichi Takasuka is an inventor associated with Hyogo, Japan, and Nuvoton Technology Corporation Japan. His patent work concerns semiconductor laser technology and device manufacturing. The supplied information credits him with 1 patent.

Latest Patents

Takasuka’s listed patent is “Semiconductor Laser Device and Method of Manufacturing the Same.” It describes a semiconductor laser with N-type and P-type cladding layers surrounding an active layer. Within the active layer, a well layer is paired with two P-side barrier layers; the second barrier has a higher aluminum composition ratio and greater band-gap energy than the first. The device also features an end-face window structure, where the well layer’s band-gap energy near the laser-emitting end face is greater than in the central portion along the resonator.

Career Highlights

The available information connects Takasuka’s work to Nuvoton Technology Corporation Japan and identifies his contribution to semiconductor laser device design and manufacturing. The patent’s layered structure and end-face window feature are intended to address the design of a laser-emitting semiconductor device.

Collaborations

Togo Nakatani is identified as Takasuka’s coworker. No further details about their specific collaboration are provided.

Conclusion

Shoichi Takasuka’s listed patent reflects his work in semiconductor laser technology, particularly active-layer design and end-face window structures.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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