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For the Inventor, By the Inventor

Tokyo, Japan

Shogo Matsubara

This inventor holds 4 USPTO granted patents and 3 published patent applications. Top assignee: Nec Corporation. Active years: 1991-1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shogo Matsubara. Retrieved from https://idiyas.com/inventor/shogo-matsubara-pxjhs4rr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 4 

% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 4

Forward Citations = 307(Granted Patents)


Company Filing History:

goldMedal4 out of 36,735 
 
Nec Corporation
 patents

Years Active: 1991-1993

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4 patents (USPTO):Explore Patents
1. 5262920 - Thin film capacitor (1993-11-16),
2. 5122923 - Thin-film capacitors and process for manufacturing the same (1992-06-16),
3. 5084438 - Electronic device substrate using silicon semiconductor substrate (1992-01-28),
4. 5053917 - Thin film capacitor and manufacturing method thereof (1991-10-01),

Title: Shogo Matsubara: Innovator in Thin Film Capacitor Technology

Introduction

Shogo Matsubara is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of thin film capacitors, holding a total of 4 patents. His work has advanced the technology used in electronic components, making them more efficient and reliable.

Latest Patents

Matsubara's latest patents include innovative designs for thin film capacitors. One of his patents describes a thin film capacitor where a lower electrode, a dielectric film, and an upper electrode are formed in order on a substrate. Both electrodes are constructed with a first conductive layer made of materials such as Ti, Ta, Mo, and W, followed by a second conductive layer made of Pt, Pd, Rh, and Al. Additionally, a conductive metal oxide film, such as PdO, can be formed as needed between the electrodes and the dielectric film. Another patent outlines a thin-film capacitor that consists of a substrate, a first electrode made of polycrystalline silicon, a second electrode, a dielectric, and a third electrode made of aluminum, all stacked in sequence. The second electrode, which directly supports the dielectric layer, is made from materials including ruthenium, rhenium, osmium, and iridium.

Career Highlights

Shogo Matsubara is currently employed at NEC Corporation, where he continues to innovate in the field of electronics. His work has been instrumental in developing advanced capacitor technologies that are essential for modern electronic devices.

Collaborations

Matsubara has collaborated with notable colleagues, including Yoichi Miyasaka and Sadahiko Miura. Their combined expertise has contributed to the success of various projects and patents in the field of thin film technology.

Conclusion

Shogo Matsubara is a key figure in the development of thin film capacitors, with a notable portfolio of patents that reflect his innovative spirit. His contributions to NEC Corporation and the broader electronics industry continue to shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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