Company Filing History:
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Years Active: 2025
Title: Shizuka Ogasawara: Innovator in Porous Alumina Film Technology
Introduction
Shizuka Ogasawara is a prominent inventor based in Kyoto, Japan. She has made significant contributions to the field of materials science, particularly in the synthesis of sol solutions for porous alumina films. With a total of 2 patents, her work has implications for various industrial applications.
Latest Patents
Ogasawara's latest patents include a method for synthesizing SiO2Al2O3 containing sol solution and a method for forming porous alumina film. These methods focus on creating a sol solution that exhibits high heat resistance, a high specific surface area, and excellent adhesion to various substrate surfaces. The process involves preparing an alkoxysilane and an aluminum solution, precipitating a silicon compound adsorbed on aluminum hydroxide, and washing the precipitate to create a precipitate cake. A slurry solution is then prepared, followed by a pH adjusting treatment and an autoclave treatment to yield the desired SiOAlO containing sol solution.
Career Highlights
Throughout her career, Ogasawara has worked with notable organizations such as Renaissance Energy Research Corporation and the National Institute of Technology. Her experience in these institutions has allowed her to refine her expertise in materials science and innovation.
Collaborations
Some of her notable coworkers include Akira Hasegawa and Osamu Okada. Their collaborative efforts have contributed to advancements in the field and have fostered a productive research environment.
Conclusion
Shizuka Ogasawara's innovative work in the synthesis of porous alumina films showcases her dedication to advancing materials science. Her patents reflect her commitment to developing technologies that have practical applications in various industries.