Hillsborough, NJ, United States of America

Shiping Guo

This inventor holds 1 USPTO granted patent. Top assignee: Iqe Rf, LLC. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shiping Guo. Retrieved from https://idiyas.com/inventor/shiping-guo-hclf6r5b

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Innovator Spotlight: Shiping Guo

Introduction

Shiping Guo, an accomplished inventor based in Hillsborough, NJ, has made significant contributions to the field of semiconductor technology. With a focus on enhancing field-effect devices, he has secured a patent that stands out in contemporary research.

Latest Patents

Guo's notable patent is titled "Group III-nitride enhancement mode field effect devices and fabrication methods." This innovative patent details structures and fabrication processes for group III-nitride enhancement mode field-effect devices. It describes a two-dimensional electron gas present at or near the interface between two active layers, specifically a group III-nitride barrier layer and a group III-nitride semiconductor layer. The barrier layer features a band gap that is wider than that of the adjacent semiconductor layer. To induce the two-dimensional electron gas, one or more layers are provided atop the barrier layer, with a gate electrode in direct contact with it. This groundbreaking work addresses the ohmic contacts for source and drain electrodes, which are either in direct contact with the barrier layer or a disposed semiconductor nitride layer.

Career Highlights

As an inventor, Shiping Guo has demonstrated a keen understanding of semiconductor devices and their applications. His work at IQE RF, LLC—a prominent company specializing in advanced semiconductor technology—highlights his dedication to innovation and excellence in the field.

Collaborations

Shiping Guo collaborates closely with fellow inventor Xiang Gao, pooling their expertise to drive advancements in semiconductor research and development. Their joint efforts contribute to the potential of new technologies that utilize group III-nitride materials, which are vital for improving electronic performance.

Conclusion

Shiping Guo's innovative work in the realm of group III-nitride enhancement mode field-effect devices exemplifies the spirit of invention. His patents not only enhance scientific understanding but also pave the way for future advancements in semiconductor technologies. With his continued contributions and collaboration with others in the field, Guo solidifies his position as a key player in technological innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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