Saitama, Japan

Shiori Murayama

This inventor holds 1 USPTO granted patent. Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shiori Murayama. Retrieved from https://idiyas.com/inventor/shiori-murayama

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Shiori Murayama: Innovator in Semiconductor Technology

Introduction

Shiori Murayama is a prominent inventor based in Saitama, Japan. She has made significant contributions to the field of semiconductor technology. With a focus on enhancing the performance of semiconductor devices, her work has garnered attention in the industry.

Latest Patents

Shiori Murayama holds a patent for a semiconductor device and method for manufacturing a semiconductor device. This innovative device is designed to provide a high on-state current. The semiconductor device includes a transistor that features a complex structure of insulators and conductors, which optimizes its performance. The patent details the arrangement of various oxides and insulators, ensuring that the device operates efficiently.

Career Highlights

Throughout her career, Shiori has demonstrated a commitment to advancing semiconductor technology. Her work at Semiconductor Energy Laboratory Co., Ltd. has positioned her as a key player in the industry. She has been instrumental in developing new methods that enhance the functionality of semiconductor devices.

Collaborations

Shiori Murayama has collaborated with notable figures in the field, including Shunpei Yamazaki and Haruyuki Baba. These partnerships have allowed her to leverage diverse expertise and drive innovation in her projects.

Conclusion

Shiori Murayama's contributions to semiconductor technology highlight her role as an influential inventor. Her patent and collaborative efforts reflect her dedication to advancing the field. Through her work, she continues to inspire future innovations in semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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