Company Filing History:
Years Active: 1978
Title: Shinya Yasue: Innovator in Semiconductor Technology
Introduction
Shinya Yasue is a prominent inventor based in Matsubara, Japan. He is known for his contributions to the field of semiconductor technology, particularly in the development of complementary-MOS integrated devices. His innovative work has led to advancements that enhance the performance and efficiency of electronic components.
Latest Patents
Yasue holds a patent for a complementary-MOS integrated semiconductor device. This invention focuses on the formation of well-regions of a conductivity type opposite to that of a substrate, which is crucial for determining a first threshold voltage level. The process involves ion implantation on selected gates in the respective channels formed on the substrate and the well-regions. The design allows for the coupling of two channels to form a complementary-MOS transistor pair, each having distinct threshold voltage levels.
Career Highlights
Shinya Yasue has made significant strides in his career, particularly through his work at Sharp Kabushiki Kaisha Corporation. His expertise in semiconductor technology has positioned him as a key figure in the industry, contributing to the advancement of electronic devices.
Collaborations
Yasue has collaborated with notable colleagues, including Takeo Fujimoto and Yasuo Torimaru. These partnerships have fostered innovation and have been instrumental in the development of new technologies in the semiconductor field.
Conclusion
Shinya Yasue's contributions to semiconductor technology exemplify the impact of innovative thinking in the electronics industry. His patent and collaborative efforts continue to influence advancements in this critical field.