The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 1978
Filed:
Apr. 05, 1977
Takeo Fujimoto, Toyonaka, JP;
Yasuo Torimaru, Nara, JP;
Shin-ichi Ogawa, Suita, JP;
Shinya Yasue, Matsubara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Formation of well-regions of a conductivity type opposite to that of a substrate is achieved in such a manner to determine a first threshold voltage level. Ion implantation is effected on desirably selected gates in the respective channels formed on the substrate and the well-regions. Two channels on the ion implanted substrate and on the well-region in which the ion implantation is not effected, are coupled to form a complementary-MOS transistor pair having a first threshold voltage level. The channels on the substrate in which the ion implantation is not effected and on the ion implanted well-region are coupled to form another complementary-MOS transistor pair having a second threshold voltage level.