Tokyo, Japan

Shinya Ohtomo

This inventor holds 3 USPTO granted patents and 1 published patent application and 3 EPO patents. Top assignees: 3M Innovative Properties Company, The Furukawa Electric Co., Ltd.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shinya Ohtomo. Retrieved from https://idiyas.com/inventor/shinya-ohtomo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 100.0

 

Average Co-Inventor Count = 5.5

ph-index = 1

Forward Citations = 10(Granted Patents)


Location History:

  • Tokyo, JP (2017)
  • Yamagata Pref., JP (2018)

Company Filing History:


Years Active: 2017-2026

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3 patents (USPTO):Explore Patents

Title: The Innovative Journey of Shinya Ohtomo

Introduction: Shinya Ohtomo, a pioneering inventor hailing from Yamagata Prefecture, Japan, has made significant contributions to the field of technology and innovation.

Latest Patents: Shinya Ohtomo holds several groundbreaking patents in the areas of semiconductor materials and nanotechnology, revolutionizing the way we approach electronic devices and materials science.

Career Highlights: With a career spanning over two decades, Shinya Ohtomo has worked tirelessly to push the boundaries of scientific discovery. His research has led to the development of novel materials with unique electronic properties, paving the way for advancements in various industries.

Collaborations: Throughout his career, Shinya Ohtomo has collaborated with leading researchers, scientists, and engineers from around the world. His collaborative efforts have resulted in the publication of numerous research papers and the successful implementation of innovative technologies.

Conclusion: Shinya Ohtomo's passion for innovation and his relentless pursuit of knowledge have established him as a prominent figure in the world of inventors. His work continues to inspire future generations of scientists and engineers to push the limits of what is possible in the realm of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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