Shinya Fukushima

Title: Shinya Fukushima: Innovator in Silicon Wafer Measurement Technologies

Introduction

Shinya Fukushima is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the measurement of iron concentrations in silicon wafers. With a total of 6 patents to his name, his work has advanced the accuracy and reliability of measurements critical to the semiconductor industry.

Latest Patents

Fukushima's latest patents include a groundbreaking method for measuring the concentration of iron (Fe) in p-type silicon wafers. This method utilizes a Spontaneous Potential (SPV) measurement apparatus, which enhances measurement accuracy for Fe concentrations as low as 1×10⁻⁶ cm⁻³. The process involves conducting measurements in a controlled atmosphere, ensuring that the total concentrations of sodium (Na), ammonium (NH), and potassium (K) do not exceed 1.750 μg/m³, while the total concentrations of fluorine (F), chlorine (Cl), nitrogen oxides (NO), phosphorus (PO), bromine (Br), and sulfur oxides (SO) remain below 0.552 μg/m³.

Career Highlights

Throughout his career, Shinya Fukushima has worked with notable companies such as Sumco Corporation and Olympus Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor technologies and measurement techniques.

Collaborations

Fukushima has collaborated with esteemed colleagues, including Takehiro Tsunemori and Masahiko Mizuta. These partnerships have contributed to the development of innovative solutions in the field of silicon wafer measurement.

Conclusion

Shinya Fukushima's contributions to the semiconductor industry, particularly through his patented methods for measuring iron concentrations in silicon wafers, have established him as a key figure in this technological domain. His work continues to influence advancements in measurement accuracy and reliability in semiconductor manufacturing.