The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Oct. 02, 2018
Sumco Corporation, Tokyo, JP;
Shinya Fukushima, Tokyo, JP;
Takehiro Tsunemori, Tokyo, JP;
SUMCO CORPORATION, Tokyo, JP;
Abstract
Provided is a method of measuring the concentration of Fe in a p-type silicon wafer by an SPV method enabling improvement in the measurement accuracy for Fe concentrations of 1×10/cmor less. The method of measuring the concentration of Fe in a p-type silicon wafer includes measuring an Fe concentration in the p-type silicon wafer based on measurement using an SPV method. The measurement is performed in an atmosphere in which the total concentration of Na, NH, and Kis 1.750 μg/mor less, and the total concentration of F, Cl, NO, PO, Br, NO, and SOis 0.552 μg/mor less.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile