Company Filing History:
Years Active: 2022
Title: Shinsuke Miyajima: Innovator in Semiconductor Technology
Introduction
Shinsuke Miyajima is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in oxide semiconductor devices. With a total of 2 patents, his work has paved the way for advancements in this critical area of electronics.
Latest Patents
Miyajima's latest patents include an oxide semiconductor device and a power semiconductor device. The oxide semiconductor device aims to prevent the deterioration of characteristics in oxide semiconductor technology. It features an n-type gallium oxide epitaxial layer, a p-type oxide semiconductor layer, and an oxide layer made from a material different from gallium oxide. This innovative design enhances the performance and reliability of oxide semiconductor devices. The power semiconductor device consists of an n-type semiconductor layer with a single-crystal structure made of a wide-gap semiconducting material, along with a p-type semiconductor layer that has either a microcrystalline or amorphous structure. This configuration allows for improved efficiency in power applications.
Career Highlights
Throughout his career, Shinsuke Miyajima has worked with notable organizations such as Mitsubishi Electric Corporation and the Tokyo Institute of Technology. His experience in these esteemed institutions has contributed to his expertise in semiconductor technology and innovation.
Collaborations
Miyajima has collaborated with talented individuals in his field, including Yohei Yuda and Tatsuro Watahiki. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.
Conclusion
Shinsuke Miyajima's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the field, driving innovation and enhancing the performance of electronic devices.