The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Feb. 14, 2017
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Tokyo Institute of Technology, Meguro-ku, JP;
Tatsuro Watahiki, Tokyo, JP;
Yohei Yuda, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Shinsuke Miyajima, Tokyo, JP;
Yuki Takiguchi, Tokyo, JP;
Mitsubishi Electric Corporation, Chiyoda-ku, JP;
Tokyo Institute of Technology, Meguro-ku, JP;
Abstract
An n-type semiconductor layer has a single-crystal structure and is made of a wide-gap semiconducting material. A p-type semiconductor layer is provided on the n-type semiconductor layer and made of a material different from the aforementioned wide-gap semiconducting material, and has either a microcrystalline structure or an amorphous structure. An electrode is provided on at least one of the n-type semiconductor layer and the p-type semiconductor layer.