Tokyo, Japan

Shinnosuke Yasuoka

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Shinnosuke Yasuoka: Innovator in Ferroelectric Thin Films

Introduction

Shinnosuke Yasuoka is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of materials science, particularly in the development of ferroelectric thin films. His innovative work aims to enhance the properties and applications of electronic devices.

Latest Patents

Yasuoka holds a patent for a ferroelectric thin film and an electronic element utilizing this technology. The patent describes a ferroelectric thin film that exhibits much higher ferroelectric properties than conventional Sc-doped ferroelectric thin films made from aluminum nitride. This invention also emphasizes stability for practical applications. The chemical formula for the ferroelectric thin film is represented as M1M2N, where M1 includes elements like Al and Ga, and M2 comprises elements such as Mg, Sc, Yb, and Nb.

Career Highlights

Shinnosuke Yasuoka is affiliated with the National Institute of Advanced Industrial Science and Technology. His work at this esteemed institution has allowed him to focus on cutting-edge research and development in ferroelectric materials.

Collaborations

Yasuoka has collaborated with notable colleagues, including Masato Uehara and Morito Akiyama. These partnerships have contributed to the advancement of his research and the successful development of innovative technologies.

Conclusion

Shinnosuke Yasuoka's contributions to the field of ferroelectric thin films represent a significant advancement in materials science. His innovative patent and collaborative efforts highlight his commitment to enhancing electronic device performance.

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